Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 9: Poster I
HL 9.5: Poster
Montag, 27. März 2006, 15:15–17:45, P3
Optical Investigation of AlN Layers and AlN Single Crystals — •Günther M. Prinz1, Martin Feneberg1, Christoph Kirchner2, Sarad B. Thapa2, Matthias Bickermann3, Boris Epelbaum3, Ferdinand Scholz2, Klaus Thonke1, and Rolf Sauer1 — 1Abt. Halbleiterphysik, Universität Ulm, D-89069 Ulm — 2Abt. Optoelektronik, Universität Ulm, D-89069 Ulm — 3Institut für Werkstoffwissenschaften 6, Universität Erlangen, D-91058 Erlangen
Aluminum nitride (AlN) has an ultra-wide direct bandgap of approximately 6.2eV at LHe temperature. This fact and the full miscibility with gallium nitride make AlN a very promising material for optoelectronic applications.
We investigate both AlN layers grown by MOCVD on sapphire and AlN single crystals using cathodoluminescence and photoluminescence spectroscopy. In both cases the light is dispersed by a monochromator with a focal length of 1m (yielding a spectral resolution better than 1meV) and detected by a LN2-cooled CCD-camera.
The measurements are carried out from LHe to room temperature. For both sample types, we observe strong near band-edge emission at around 6eV. The spectral shift of the near band-edge luminescence as a function of temperature is fitted using different models.