Dresden 2006 – wissenschaftliches Programm

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O: Oberflächenphysik

O 10: Semiconductor surfaces and interfaces

O 10.10: Vortrag

Montag, 27. März 2006, 17:15–17:30, PHY C213

RF-sputtered indium-tin-oxynitride films investigated by photoelectron spectroscopy — •Marcel Himmerlich¹, Maria Koufaki², Manolis Sifakis², Stefan Krischok¹, Elias Aperathitis², and Juergen A. Schaefer¹ — ¹Institut für Physik und Zentrum für Mikro- und Nanotechnologien, TU Ilmenau, P.O. Box 100565, 98684 Ilmenau, Germany — ²Microelectronics Research Group, IESL, Foundation for Research & Technology–HELLAS, P.O. Box 1527, 71110 Heraklion, Crete, Greece

Indium-tin-oxide (ITO) and indium-tin-oxynitride (ITON) thin films have been fabricated by rf-sputtering in Ar or N₂ plasma, respectively. The deposition was performed on pre-cleaned Si using an ITO target (80% In₂O₃ + 20% SnO₂). During the growth procedure the gas flow was controlled to maintain a total pressure of 5×10⁻³ Torr in the chamber. The dependence of the surface chemical composition and the electronic properties on the rf power were examined using photoelectron spectroscopy (XPS, UPS). Changes upon annealing were investigated by rapid thermal annealing in N₂ atmosphere as well as by in vacuo heating combined with a monitoring of the gas desorption using a quadrupole mass spectrometer. The observed differences in the carrier concentration are well correlated with the existence or absence of an oxygen reduced phase in the films, as can be seen by a high binding energy feature in the O1s, Sn3d and In3d core levels. A complex incorporation of nitrogen into the ITON films was found which reveals itself in the existence of 5 different N1s states. Annealing above 550^∘C resulted in a release of nitrogen combined with the formation of the oxygen reduced phase.