Dresden 2006 – wissenschaftliches Programm
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O: Oberflächenphysik
O 10: Semiconductor surfaces and interfaces
O 10.11: Vortrag
Montag, 27. März 2006, 17:30–17:45, PHY C213
XPS and XPD studies on the system Hafnium(oxide) on Si(100) using soft x-rays — •D. Weier1,2, C. Flüchter1,2, S. Dreiner1, M. Schürmann1, U. Berges1,2, M.F. Carazzolne3, A. Pancotti3, R. Landers3,4, G.G. Kleiman4, C. Westphal1,2, and E. Henschel1 — 1Experimentelle Physik 1 - Universität Dortmund, Otto-Hahn-Str.4, D 44221 Dortmund, Germany — 2DELTA - Universität Dortmund, Maria-Göppert-Meier-Str. 2, D 44227 Dortmund, Germany — 3Laboratório Nacional de Luz Sincrotron, C.P. 6192, 13084-971 Campinas, SP, Brazil — 4Instituto de Fisica - Universidade Estadual de Campinas, C.P. 6165, 13083-970 Campinas, SP, Brazil
Continuous down-scaling of the silicon based MOSFETs results in gate lengths of less than 100 nm. Scaling down the gate dielectric to less than 15 Å is not possible using SiO2 because of an increasing leakage current. Presently, there are many higk-k candidates discussed as a substitution for SiO2 as the gate dielectric. One of the most promising candidates is HfO2. In this work ultrathin films of HfSi on Si(100) were studied by XPD to investigate possible interface structures between Silicon and Hafnium. It will be shown that a modified C49 structure is found for HfSi by a comparision of experimental with simulated diffraction patterns. Further on, experimental XPS and XPD results for the systems HfO/Si(100) are shown.