Dresden 2006 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
O: Oberflächenphysik
O 11: Epitaxy and growth I
O 11.2: Vortrag
Montag, 27. März 2006, 15:15–15:30, WIL A317
Pulsed Laser Deposition of Fe on Cu Single Crystal Surfaces - Investigations by STM and Time-of-Flight Spectroscopy — •Georg Rauchbauer1, Andreas Buchsbaum1, Hannes Schiechl1, Werner Rupp1, Michael Schmid1, Peter Varga1, and Albert Biedermann2 — 1Institut für Allgemeine Physik, Technische Universität Wien — 2Institut für Materialphysik, Universität Wien
In order to understand the influence of growth conditions on structure, morphology and properties we investigated ultrathin pulsed laser deposited Fe films on Cu. The main analysis technique employed was scanning tunneling microscopy (STM), allowing us to determine the structure of the surfaces. For measuring the energy distribution of the ablated species, a time-of-flight (TOF) spectrometer, applicable for ions as well as for neutrals, has been constructed. At low coverage, low laser fluence leads to bilayer island growth while higher laser fluences result in layer-by-layer growth. We observed intermixing of Fe and Cu in the films which is caused by implantation of Fe with high kinetic energy. With increasing laser fluence, an increasing number of Fe atoms is implanted. The TOF spectra show hyperthermal energies of the neutrals, high degrees of ionization up to several dozen percent and kinetic ion energies of 50 to 150 eV, depending on the laser fluence. The ion energies can be related to the different growth modes observed.