HL 35: Devices
Donnerstag, 29. März 2007, 10:00–12:45, H13
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10:00 |
HL 35.1 |
Recent Advances in Complementary Tunneling FETs — •Martin Sterkel, Bernhard Fabel, Thomas Maul, Linda Nowack, and Walter Hansch
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10:15 |
HL 35.2 |
MOSFET controlled Emission from Micro Field Emitter Tips — •Thomas Maul, Bernhard Fabel, Linda Nowack, Martin Sterkel, and Walter Hansch
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10:30 |
HL 35.3 |
A non-volatile memory device based on self-organized quantum dots — •Andreas Marent, Martin Geller, David Feise, Konstantin Pötschke, and Dieter Bimberg
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10:45 |
HL 35.4 |
Geometrical spin dephasing in quantum dots — •Pablo San-Jose, Gergely Zarand, Alexander Shnirman, and Gerd Schön
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11:00 |
HL 35.5 |
Silicon Epitaxy for vertical Tunnel Field-Effect-Transistors — •Markus Schindler, Oliver Senftleben, Mathias Born, Krishna Kumar Bhuwalka, Matthias Schmidt, and Ignaz Eisele
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11:15 |
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15 min. break
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11:30 |
HL 35.6 |
Characterisation of ultrathin ALD-Al2O3 films in MOS devices — •Bernhard Fabel, Martin Sterkel, Thomas Maul, Linda Nowack, Walter Hansch, Florian Speck, Kunyuan Gao, Thomas Seyller, and Lothar Ley
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11:45 |
HL 35.7 |
Butted Source Contact Field Effect Transistor — •Marcus Weis, Michael Fulde, and Doris Schmitt-Landsiedel
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12:00 |
HL 35.8 |
Acoustically driven integrated Mach-Zehnder-Interferometer — Markus Beck, Mauricio de Lima, Rudolf Hey, and •Paulo Santos
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12:15 |
HL 35.9 |
Beitrag abgesagt — •XXX XXX
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12:30 |
HL 35.10 |
Gated Hallbars and Pseuod MOSFETs for mobility measurements on biaxially tenisle strained silicon on insulator layers — •Sebastian Frederik Feste, Joachim Knoch, and Siegfried Mantl
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