Regensburg 2007 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 35: Devices

HL 35.10: Vortrag

Donnerstag, 29. März 2007, 12:30–12:45, H13

Gated Hallbars and Pseuod MOSFETs for mobility measurements on biaxially tenisle strained silicon on insulator layers — •Sebastian Frederik Feste¹, Joachim Knoch², and Siegfried Mantl¹ — ¹Forschungszentrum Jülich, Institut für Bio- und Nanosysteme 1 (IBN 1-IT), Deutschland — ²IBM Rüschlikon, Zürich, Schweiz

We studied the mobility enhancement in biaxially tensile strained silicon on insulator (SSOI) layers with gated Hallbar MOSFETs and Pseudo-MOSFETs with Schottky contacts. The SSOI was fabricated by layer transfer of a strained-Si/SiGe virtual substrate to an oxidized wafer. The final structure was obtained by wet etching of the remaining SiGe. Hall measurements allow a measurement of the carrier concentration and mobility. The advantage of this method is the direct measurement of the inversion layer carrier concentration so that no assumption about the gate capacitance is necessary. Psi-MOSFETs allow one to preform transistor-like measurements on SOI wafers without the need for actual device processing. They can therefore be used as a quick-turnaround tool for SOI wafer characterization. The dependence of the extracted mobility on the Schottky barrier height and the channel length has been studied and compared to the values obtained form the gated Hallbars. Both techniques show a nearly doubled electron mobility of 580 cm²/Vs for SSOI of different thicknesses compared to SOI.