Berlin 2008 – wissenschaftliches Programm
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BP: Fachverband Biologische Physik
BP 23: Electrical Stimulation and Recording
BP 23.3: Vortrag
Donnerstag, 28. Februar 2008, 12:30–12:45, PC 203
Neuronal cells on GaN-based materials — •H. Witte1, M. Charpentier1, M. Mueller1, T. Voigt2, M. Deliano3, B. Garke1, P. Veit1, T. Hempel1, A. Diez1, A. Reiher1, F. Ohl3, A. Dadgar1, J. Christen1, and A. Krost1 — 1Inst. of Experimental Physics, Otto-von-Guericke-University Magdeburg, Magdeburg — 2Inst. of Physiology, Otto-von-Guericke-University Magdeburg, Magdeburg — 3Leibniz Institute of Neurobiology, Magdeburg
Group-III-nitride-based devices can be used for recording electrical activities of cell signals using the main advantage of high chemical and physiological stability. However, for the application of these materials in neural tissue their biocompatibility should be proofed. We have investigated the interactions between group-III-semiconductors and (1) dissociated neuron networks of embryonic rat cerebral cortex, and (2) neurons within the primary auditory cortex of Mongolian gerbils (rodents). The neuron networks were cultured within more than two days on the surfaces of GaN, AlGaN, AlN and GaO/GaN layers and were analyzed using optical and electron microscopy. In addition, pieces of nitrides were implanted into the cortex of living gerbils and remained there for several months. The reactions of the ambient neuron tissue were investigated by histological methods. Furthermore, the impact of the neuron cell cultures on the substrate surfaces were analyzed using atomic force microscopy and X-ray photoelectron spectroscopy. All investigations showed the stability and the non-toxic behavior of the pure GaN layers whereas the Al-containing layers were somewhat affected.