Berlin 2008 – wissenschaftliches Programm

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BP: Fachverband Biologische Physik

BP 3: Neuronal Systems

BP 3.5: Vortrag

Montag, 25. Februar 2008, 15:30–15:45, C 243

Gating charge effects as an intrinsic mechanism for channel noise reduction — Gerhard Schmid, Igor Goychuk, and •Peter Hänggi — Institut für Physik, Universität Augsburg, D-86135 Augsburg

Within generalizations of the archetypical Hodgkin-Huxley modelling we investigate the influence of intrinsic properties of ion channel gating on the spiking activity of neuronal membrane patches. Channel noise which stems from the randomness of ion channel gating causes spontaneous spiking and synchronization effects as Stochastic Resonance or Coherence Resonance. The random switching of voltage-gated ion channels between open and closed configurational channel states is connected with gating charge movement within the cell membrane. The latter results in a drastically reduced spontaneous spiking activity [1]. Consequently, this demonstrates a prominent intrinsic mechanism for channel noise reduction. Within the effect of Stochastic Resonance the effective reduction of intrinsic noise level manifests itself.

[1] G. Schmid, I. Goychuk, P. Hänggi, Phys. Biol. 3 (2006) 248