Berlin 2008 – wissenschaftliches Programm
DF 12.6: Vortrag
Donnerstag, 28. Februar 2008, 12:00–12:20, EB 107
On the electronic and dielectric characterisation of thin cubic PrO2 layers on Silicon — •Olaf Seifarth1, Christian Walczyk1, Grzegorz Lupina1, Jaroslaw Dabrowski1, Günter Weidner1, Peter Zaumseil1, Dieter Schmeißer2, Peter Storck3, Hans-Joachim Müssig1, and Thomas Schroeder1 — 1IHP microelectronics, 15236 Frankfurt (Oder), Germany — 2Brandenburg Technical University, 03046 Cottbus, Germany — 3Siltronic AG, 81737 München, Germany
For the integration of 100 % Ge onto the Si platform, a buffer oxide approach has been developed recently, using rare earth oxides to tune the lattice constant between the Si and the Ge. Among these buffer oxides, PrO2 is a prospective candidate with high quality crystalline growth on Si, moderated by an interfacial Pr-silicate between. In order to specify electronic properties of thin PrO2 and its interface on Si(111), especially the width of the band gap, we performed synchrotron radiation based XPS, UPS and XAS measurements at the U49/2 PGM 2 beamline at BESSY II and correlate the results with our structural characterisation performed by TEM and XRD. In order to evaluate the dielectric properties of thin PrO2 layers on Si(111), we performed temperature-, time-, voltage-, and layer thickness-dependent leakage current measurements (J-V). Here, we identified relaxation behaviour in the leakage current, successfully addressed to defect like states inside the Pr-silicate interface layer, corroborated by frequency dependent capacitance versus voltage (C-V) measurements.