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Berlin 2008 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 12: Dielectric and ferroelectric thin films and nanostructures II

Thursday, February 28, 2008, 10:00–13:00, EB 107

10:00 DF 12.1 Invited Talk: Piezoelectric ceramic materials - a success story — •Dieter Sporn, Andreas Schönecker, Bernhard Brunner, and Horst Beige
10:40 DF 12.2 Thickness dependence of leakage current through capacitor stacks with high-k materials for DRAM application — •Herbert Schroeder
11:00 DF 12.3 Leakage spot evolution in thin (ZrO2)0.8(Al2O3)0.2 -films observed by conductive atomic force microscopy (CAFM) — •Dominik Martin, Oliver Bierwagen, Matthias Grube, Lutz Geelhaar, and Henning Riechert
11:20 DF 12.4 The influence of image potential on defect assisted leakage mechanisms — •Grzegorz Kozlowski and Jarek Dabrowski
11:40 DF 12.5 The mechanisms of leakage current in BaHfO3 films — •Grzegorz Kozlowski, Jarek Dabrowski, Grzegorz Lupina, Gunther Lippert, Piotr Dudek, and Hans-Joachim Müssig
12:00 DF 12.6 On the electronic and dielectric characterisation of thin cubic PrO2 layers on Silicon — •Olaf Seifarth, Christian Walczyk, Grzegorz Lupina, Jaroslaw Dabrowski, Günter Weidner, Peter Zaumseil, Dieter Schmeißer, Peter Storck, Hans-Joachim Müssig, and Thomas Schroeder
12:20 DF 12.7 Transition metal oxide based NVM for IHPs 0.13 micron BiCMOS technology — •Rakesh Sohal, Christian Walczyk, Ioan Costina, Peter Zauseil, Alexander Fox, and Thomas Schroeder
12:40 DF 12.8 Space charge polarization in solid electrolytes — •Björn Martin and Herbert Kliem
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