Berlin 2008 – wissenschaftliches Programm

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DF: Fachverband Dielektrische Festkörper

DF 4: High-k dielectrics for highly scaled Silicon-based Micro- and Nanoelectronics

DF 4.4: Hauptvortrag

Montag, 25. Februar 2008, 15:30–16:10, EB 107

Do new materials solve the upcoming challenges of future DRAM memory cells? — •Uwe Schröder — Qimonda Dresden GmbH & Co. OHG, Koengisbruecker Strasse 180, 01099 Dresden

A permanent trend in miniaturization of semiconductor DRAM devices has required continuous introduction of new materials. Specially, for capacitor and transistor applications a strong push for new dielectric materials and metal electrodes is ongoing. As design rules for capacitors are dropping below 50nm geometrical options turn out to be more and more challenging. Dielectrics with permittivity values more than 30 and metal electrodes become important. In the past few years the introduction of AlO-, HfO-, and ZrO-based dielectric materials with TiN electrodes were reported. The main focus of this work is to compare mixed and laminate dielectric films in terms of crystallographic phase resulting in capacitance enhancement and leakage current improvement. Optimized dielectric properties were reached for doped HfO- and ZrO dielectrics in a cubic/ tetragonal phase. Simultaneously, conventional SiON/Poly-Si gate devices will be replaced by high-k dielectric/metal gate structures for continuous scaling. Here industry narrowed down the choice of high-k dielectrics to HfO-based materials. Depending on the device specifications different metal electrodes are proposed. Trends, progress, and challenges will be reviewed.