Berlin 2008 – wissenschaftliches Programm

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DF: Fachverband Dielektrische Festkörper

DF 9: Poster

DF 9.17: Poster

Dienstag, 26. Februar 2008, 15:00–18:00, Poster G

Antiferroelectric / ferroelectric PbZrO₃ / Pb(Zr_0.8Ti_0.2)O₃ multilayers: properties and effects — •Ksenia Boldyreva¹, Lucian Pintilie^1,2, Andriy Lotnyk¹, Nikolai Zakharov¹, Marin Alexe¹, and Dietrich Hesse¹ — ¹Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle/Saale, Germany — ²NIMP, P.O. Box MG-7, 077125 Bucharest-Magurele, Romania

Epitaxial antiferroelectric / ferroelectric PbZrO₃ / PbZr_0.8Ti_0.2O₃ (PZO/PZT) multilayers (MLs) were grown by pulsed laser deposition on SrTiO₃(100) substrates, covered with a SrRuO₃ (100) bottom electrode and a thin tetragonal PbZr_0.2Ti_0.8O₃ buffer layer. Hysteresis, switching current-voltage and capacitance-voltage curves of the MLs with an individual layer thickness above 10 nm show a mixed AFE-FE behavior, whereas below 10 nm the MLs show only FE behavior. Obviously the PbZrO₃ layers thinner than 10 nm underwent a transition into the ferroelectric state with a corresponding symmetry change from orthorhombic to rhombohedral. An X-ray diffraction ϑ-2ϑ scan and Reciprocal Space Mapping showed a corresponding orthorhombic-to-rhombohedral transition of the PbZrO₃ layers [1]. High-resolution TEM images were taken in order to investigate the microstructure of the PZO/PZT multilayers. The observations are discussed in terms of a strain effect.
[1] K. Boldyreva, L. Pintilie, A. Lotnyk, I. B. Misirlioglu, M. Alexe, and D. Hesse, Appl. Phys. Lett. 91, 122915 (2007)