Berlin 2008 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 1: Towards Molecular Spintronics

DS 1.1: Hauptvortrag

Montag, 25. Februar 2008, 09:30–10:00, H 2013

Organic Spintronics five years later — •Carlo Taliani — Institure for Nanostructured Materials CNR, Bologna, Italy

The discovery of spin injection in organic semiconductors (OS) dates back to 2002 when we published the paper [1]. That defined the beginning of a new branch of science in which OS are active media for the most advanced frontier in electronics in which information rather than by charges are transported and manipulated by the polarization of spins. The application of OS, as weak spin scatterers, in spintronics started from the intuition that colossal magnetoresistance ceramic materials like LSMO and OS could form a suitable interface for spin injection but, for the development of the principle, it was essential to have, both the ability and the expertise to grow organic as well as inorganic thin films in the same scientific environment as we have at ISMN. We generated the first planar spin valve made by LSMO /sexythiophene/ LSMO and observed a large magnetoresistance (MR) at room temperature depending inversely with the channel length with a peak of 30% MR for 80 nm gap. Several groups have confirmed the discovery giving rise to a solid interdisciplinary community of chemists and physicists at the frontier between magnetism and semiconductivity. In this presentation I will give an overview of the advancement in this field with a special emphasis to the potentiality of novel hybrid organic/inorganic interfaces.

[1]Room temperature spin polarized injection in organic semiconductors by V. Dediu, M. Murgia, F.C, Matacotta, C.Taliani, and S. Barbanera, Solid State Commun. !22, (2002) 181.