Berlin 2008 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 10: Semiconductor Nanophotonics: Materials, Models, Devices - Novel Concepts

DS 10.4: Vortrag

Montag, 25. Februar 2008, 18:30–18:45, H 2032

Small-Signal Cross-Gain Modulation Dynamics of Quantum-Dot Semiconductor Optical Amplifiers — •Jungho Kim¹, Matthias Laemmlin¹, Christian Meuer¹, Sven Liebich¹, Dieter Bimberg¹, and Gadi Eisenstein^1,2 — ¹Institut fuer Festkoerperphysik, Technische Universitaet Berlin, EW 5-2, Hardenbergstr. 36, 10623 Berlin, Germany — ²Electrical Engineering Department, Technion, Haifa 32000, Israel

Quantum dot (QD) semiconductor optical amplifiers (SOAs) have been intensively investigated as pattern-effect-free, high-speed wavelength converters based on cross-gain modulation (XGM). Although pattern-effect-free wavelength conversion at 10 Gbit/s was experimentally achieved due to the ultrafast recovery time of spectral hole burning (<1ps) [1] in the gain saturation region, a comprehensive understanding of the gain saturation mechanisms is still required for further performance improvement. In this paper, we investigate the high-speed small-signal XGM response of QD SOAs. We numerically solve multiple coupled rate equations, which describe carrier dynamics and optical interaction among an ensemble of inhomogeneously broadened QDs. The calculated small-signal XGM with various injection currents is well matched with the experimental results and elucidates how the dynamics of QD gain saturation can be affected by the amount of stored carriers at QD excited states.

[1] S. Dommers, V. V. Temnov, U. Woggon, J. Gomis, J. Martinez-Pastor, M. Laemmlin, and D. Bimberg, Appl. Phys. Lett., vol. 90, 033508, 2007.