Berlin 2008 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 17: Poster: Trends in Ion Beam Technology, Magnetism in Thin Films, Functional Oxides, High-k Dielectric Materials, Semiconductor Nanophotonics, Nanoengineered Thin Films, Layer Deposition Processes, Layer Growth, Layer Properties, Thin Film Characterisation, Metal and Amorphous Layers, Application of Thin Films

DS 17.17: Poster

Dienstag, 26. Februar 2008, 09:30–13:30, Poster A

FT-IR Analyis of supercritical Si_1−xC_x alloys — •Ina Ostermay¹, Thorsten Kammler², and Torsten Fahr² — ¹Fraunhofer Center Nanoelectronic Technologies, Königsbrücker Str. 180, D-01099 Dresden — ²AMD Saxony LLC & Co. KG, Wilschdorfer Landstraße 101, D-01109 Dresden

Channel strain engineering by the use of lattice-mismatched Source and Drain stressors is widely investigated to improve the carrier mobility in CMOS Technology. In order to increase the performance of N-channel Transistors, embedded layers of Silicon Carbon can be used. Most challenging is the requirement that Carbon atoms need to be present on thermodynamic unstable lattice sites in order to create strain. Since the lattice mismatch at the crystal interface is responsible for the strain generation, the Carbon content needs to exceed the solid solubility limit by several orders of magnitude. For this study, Si_1−xC_x layers up to 4,6 % Carbon were grown by Solid Phase Epitaxy (SPE) or Ultra High Vacuum Chemical Vapor Deposition (UHV-CVD) and characterized using SIMS, XRD and Fourier transformation infrared spectroscopy (FT-IR). Carbon was found not to be 100 % incorporated on lattice sites. FTIR was utilized to characterize the phase composition of those metastable layers whereas characteristic vibration modes were observed. These absorption bands could be correlated to the presence of substitutional carbon, coherent precipitates and incoherent 3C-SiC precipitates, respectively. It was found that Si_1−xC_x layers created by SPE form incoherent precipitates while epitaxial grown Si_1−xC_x alloys tend to form coherent ones.