Berlin 2008 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 17: Poster: Trends in Ion Beam Technology, Magnetism in Thin Films, Functional Oxides, High-k Dielectric Materials, Semiconductor Nanophotonics, Nanoengineered Thin Films, Layer Deposition Processes, Layer Growth, Layer Properties, Thin Film Characterisation, Metal and Amorphous Layers, Application of Thin Films

DS 17.39: Poster

Dienstag, 26. Februar 2008, 09:30–13:30, Poster A

Threshold switching in as deposited phase change materials — •Christoph Classen, Michael Woda, and Matthias Wuttig — I. Physikalisches Institut (1A), RWTH Aachen, 52056 Aachen, Germany

The material class of so called phase change (pc) materials are alloys often containing Sb or Te. Pc materials show an astonishing set of properties as they possess large electrical and optical contrast upon the phase transition from the amorphous to the crystalline phase. On the other hand this reversible transition can be accomplished by either a laser or an electrical pulse on a ns time scale, which makes this material class very promising for memory applications such as PRAM (Phase change RAM).

The threshold switching process is an essential and mandatory feature for phase change material. It enables switching from the amorphous to the crystalline state at low applied voltages and hence is crucial for mobile applications. Presumably this effect is predominantly electronic in nature. In this study our experimental method of choice is presented to measure threshold switching from sputtered as deposited thin films without processing technologically demanding device structures. This approach is employed to investigate the stoichiometry dependence of threshold switching for a number of phase change alloys.