Berlin 2008 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 17: Poster: Trends in Ion Beam Technology, Magnetism in Thin Films, Functional Oxides, High-k Dielectric Materials, Semiconductor Nanophotonics, Nanoengineered Thin Films, Layer Deposition Processes, Layer Growth, Layer Properties, Thin Film Characterisation, Metal and Amorphous Layers, Application of Thin Films
DS 17.3: Poster
Dienstag, 26. Februar 2008, 09:30–13:30, Poster A
Electron Microscopic Examinations of Nickel Silicides — Meiken Falke1, •Thomas Schaarschmidt1, Maureen MacKenzie2, Gunter Beddies1, Steffen Schulze1, and Michael Hietschold1 — 1TU Chemnitz, Deutschland — 2University of Glasgow, UK
NiSi is a promising material for electrical contacts and interconnections in the latest generation of CMOS devices [1]. However there is a lack of information especially about chemical or structural variations in nanometer scale compounds. Due to the progressing miniaturisation knowledge of such variations is crucial for the successful adoption of these materials. Another important aspect is the thermal stability of the low-resistivity NiSi phase which generally changes into NiSi2 at a temperature of 700°C. This phase transformation can be shifted towards higher temperatures by alloying with Pt [2]. Ni films on a Si(001) substrate were sputtered together with Pt under different conditions to achieve various Pt concentrations and subsequently heated at selected temperatures. The resulting Ni-Pt-Si layers were investigated by electron microscopy. EDX and EELS measurements were applied to study the elemental composition within the layers. A recent work [3] has shown that it is possible to distinguish between different pure nickel silicide phases because of a shift of the Ni-L2,3 edge in EELS spectra. A similar edge shift could be observed for the different Ni-Pt-Si phases at hand.
[1] Lavoie, C., et al., Microelectronic Engineering, 2003 [2] Mangelinck, D., et al., Applied Physics Letters, 1999 [3] Cheynet, M.C., Pantel, R., Micron, 2006 Acknowledgement: DAAD D/07/09995