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DPG

Berlin 2008 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 17: Poster: Trends in Ion Beam Technology, Magnetism in Thin Films, Functional Oxides, High-k Dielectric Materials, Semiconductor Nanophotonics, Nanoengineered Thin Films, Layer Deposition Processes, Layer Growth, Layer Properties, Thin Film Characterisation, Metal and Amorphous Layers, Application of Thin Films

DS 17.44: Poster

Dienstag, 26. Februar 2008, 09:30–13:30, Poster A

Influence of the process parameters on the photocatalytic activity of TiO2 thin films deposited by metal plasma immersion ion implantation — •D. Manova1, F. Haberkorn1, A. Gjevori1,2, J.W. Gerlach1, W. Assmann3, and S. Mändl11Leibniz-Institut für Oberflächenmodifizierung, Leipzig — 2Faculty of Natural Sciences, University of Tirana, Tirana, Albania — 3Ludwig-Maximilians-Universität München, Garching, Germany

Photocatalytic processes have been extensively studied due to their great potential for solvent and air purification and self cleaning. Recently, TiO2 powder and especially its anatase polymorph attracted a lot of interest as one of the most effective photocatalysts. Metal plasma immersion ion implantation and deposition was employed to form TiO2 thin films on Si and glass substrates by applying high voltage pulses up to 10 kV in a Ti-O plasma. XRD measurements were performed together with elastic recoil detection analysis (ERDA) to investigate the structure and to derive the stoichiometry, respectively. Additionally, scanning electron microscopy was carried out to investigate the surface morphology. Slightly substoichiometric films with a predominantly rutile structure were obtained. Subsequently, the deposited films were irradiated with UV light. A strong influence of the irradiation on the surface energy of the films, derived from the contact angle measurements, was found with increasing pulse voltage, with an additional influence of the substrate. However, no correlation between the anatase content and the changes in the surface energy was observed.

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