Berlin 2008 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 17: Poster: Trends in Ion Beam Technology, Magnetism in Thin Films, Functional Oxides, High-k Dielectric Materials, Semiconductor Nanophotonics, Nanoengineered Thin Films, Layer Deposition Processes, Layer Growth, Layer Properties, Thin Film Characterisation, Metal and Amorphous Layers, Application of Thin Films

DS 17.6: Poster

Dienstag, 26. Februar 2008, 09:30–13:30, Poster A

Quantification of Impurities in ZnO — Niklas Volbers¹, •Andreas Laufer¹, Bruno K. Meyer¹, and Kay Potzger² — ¹1. Physics Institute, Justus-Liebig University Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany — ²Institute for Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, PO Box 51 01 19, D-01314 Dresden, Germany

Current research on zinc oxide (ZnO) focuses on bipolar doping. The severe difficulties in obtaining p-type ZnO have been partially attributed to intrinsic defects and impurities that act as compensating donors. To avoid these effects, it is therefore necessary to identify the impurities in the material. Among the methods for impurity analysis, secondary ion mass spectrometry (SIMS) is very attractive due to the fact that the chemical identity of the elements can be determined directly, independent of factors such as the ionisation state or binding type. In addition, the sensitivities are very high enabling one to detect some elements in concentrations of as little as a few ppm. The quantification of SIMS data is possible using the method of relative sensitivity factors (RSF). Unfortunately, these factors vary for each host crystal and while there are RSF tables for Si and for compound semiconductors such as GaAs, InP or GaN, such a reference did not yet exist for ZnO. In the presented work, the RSF for a number of technological important elements have been determined, thus allowing one to quantify the impurity concentrations found. These factors have then been applied to ZnO crystals and thin films.