Berlin 2008 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 21: High-k Dielectric Materials - Synthesis, Properties, Applications

DS 21.4: Vortrag

Mittwoch, 27. Februar 2008, 15:45–16:00, H 2032

Modelling a nanoscale ferroic OFET — •Sibylle Gemming¹, Gotthard Seifert², Andrey Enyashin² und Lukas M. Eng³ — ¹Forschungszentrum Dresden-Rossendorf, D-01314 Dresden, Germany. — ²Fachbereich Chemie, Technische Universität Dresden, D-01062 Dresden, Germany. — ³Institut für Angew. Physik und Photophysik, Technische Universität Dresden, D-01062 Dresden, Germany.

The present study describes an approach for the scale-bridging modelling of ferroic materials as functional elements in micro- and nanoelectronic devices. Ferroic materials are characterised by temperature-dependent complex ordering phenomena of the internal magnetic, electronic, and structural degrees of freedom with several involved length and time scales. Hence, the modelling of such compounds is not straighforward, but relies on a combination of electronic-structure-based methods like ab-initio and density-functional schemes with classical particle-based approaches given by Monte-Carlo simulations with Ising, lattice-gas, or Heisenberg Hamiltonians, which incorporate material-specific parameters both from theory and experiment. The interplay of those methods is demonstrated for device concepts based on electroceramic materials like ferroelectrics and multiferroics, whose functionality is closely related with their propensity towards structural and magnetic polymorphism. In the present case, such scale-bridging techniques are employed to aid the development of an organic field effect transistor on a ferroelectric substrate generated by the self-assembly of field-sensitive molecules on the surfaces of ferroic oxides.