Berlin 2008 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 23: High-k Dielectric Materials - Synthesis, Properties, Applications
The posters can also be presented at Poster A on Tuesday morning (DS poster session).

DS 23.11: Poster

Mittwoch, 27. Februar 2008, 18:30–20:30, Poster C

XRD/GIXRD studies of Praseodymium Oxide on Si(111) — •Andreas Greuling1, Thomas Weisemöller1, Carsten Deiter1, Joachim Wollschläger1, and Thomas Schröder21Universität Osnabrück, Barbarastr. 7, D-49069 Osnabrück, Germany — 2IHP-Microelectronics, Im Technologiepark 25, D-15236 Frankfurt(Oder), Germany

Praeseodymium sesquioxides (є ≈25) are well suited for epitaxy on Si based technologies since several crystalline phases are lattice matched to Si substrates. It is known that one can deposit metastable hexagonal Pr2O3 on Si(111)[1] which can be transformed to the cubic Pr2O3 phase due to annealing with a low oxygen pressure. Here, we present CTR-Analysis of thin Praseodymium Oxide films (5nm/10nm) on Si(111)[2]. The Praseodymium Oxide was deposited on Si(111) at 625C. Following epitaxy the h-Pr2O3/Si(111) samples were annealed at 105 Pa O2. After that ex situ XRD and GIXRD experiments were performed at HASYLAB(DESY). We developed a simulation program which allows us to compute the intensity of a CTR using experimental data in order to fit the parameters of the underlying model. During our work we compared simulation runs of h-Pr2O3, c-Pr2O3 and PrO2 on Si(111). Using our program for CTR-analysis we checked models with single phases and phase mixtures.

[1] H.J. Osten, J.P. Liu, E. Bugiel, H.J. Müssig, and P. Zaumseil, J. Cryst. Growth 235, 229 (2002).

[2] Samples were prepared at IHP.

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