Berlin 2008 – wissenschaftliches Programm
DS 23: High-k Dielectric Materials - Synthesis, Properties, Applications
The posters can also be presented at Poster A on Tuesday morning (DS poster session).
DS 23.12: Poster
Mittwoch, 27. Februar 2008, 18:30–20:30, Poster C
In-situ ALD growth of Hafnium oxide films — •Konstantin Karavaev1, Massimo Tallarida1, Dieter Schmeisser1, and Ehrenfried Zschech2 — 1Brandenburgische Technische Universität Cottbus, Angewandte Physik - Sensorik, Konrad-Wachsmann-Allee17, 03046 Cottbus, Germany — 2AMD Saxony LLC & Co. KG, Center for Complex Analysis, Wilschdorfer Landstr. 101, D-01109 Dresden, Germany
We report on a novel system for in-situ atomic layer growth (ALD) of high-k dielectric films. First results were obtained for Hf-oxide samples by using Hf-tetrachloride as precursor and water as oxidizer. We compare the photoelectron spectra of Si2p, O1s and Hf4f of our in-situ prepared films with samples (ex-situ) prepared by industrial ALD reactors and discuss similarities and differences observed in the core level spectra of the various samples by considering the different growth conditions.