Berlin 2008 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 23: High-k Dielectric Materials - Synthesis, Properties, Applications
The posters can also be presented at Poster A on Tuesday morning (DS poster session).
DS 23.9: Poster
Mittwoch, 27. Februar 2008, 18:30–20:30, Poster C
Diagnostics of electrical surface parameters using conductive and electrostatic force microscopy — •Teodor Gotszalk1, Grzegorz Wielgoszewski1, Ehrenfried Zschech2, and I. W. Rangelow3 — 1Wroclaw University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Janiszewskiego 11/17, 50-372 Wroclaw, Poland — 2AMD Saxony LLC & Co., Wilschdorfer Landstr. 101, D-01109 Dresden, Germany — 3Technical University of Ilmenau, Gustav-Kirchoff-Strasse 1, D- 98 693 Germany
Failure analysis and reliability investigations of high-κ dielectrics films for the MOSFET transistors (e.g. silicon oxynitride or Hf oxide) films very often require high-resolution local measurements of electrical surface parameters. This kind of experiments can be performed using conductive atomic force microscopy, which provides simultaneous measurement of surface topography and current flowing through the investigated layer. In our experiments a precise measurement and control scanning probe system, which integrated a DC and AC low-noise current-to-voltage converter of picoampere resolution enabling high resolution of electrical conductance and capacitance in wide frequency range, was applied. In this presentation we will describe the architecture of the designed and applied experimental set-up. In addition we will also present results of simultaneous measurements of topography and tunneling current on silicon oxynitride ultra-thin films of different thickness and different composition, but also results of test measurements on highly oriented pyrolytic graphite (HOPG). We will also describe the possible usage of scanning electrostatic force microscopy, which in our opinion enables quantitative measurements of electrical voltages on the investigated surface of the microelectronic circuits and materials. In these experiments we applied near-field sensors with integrated piezoresistive and piezoelectrical deflection. In this way we simplified the architecture of the measurement system and enabled new applications on technological samples. In our talk we will describe the metrological properties of the applied sensors and instrumentation.