Berlin 2008 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 25: Trends in Ion Beam Technology: From the Fundamentals to the Application
DS 25.2: Vortrag
Donnerstag, 28. Februar 2008, 11:30–11:45, H 2013
Experimental demonstration of a determinstic single ion source with an expected implantation resolution of a few nm — •Kilian Singer, W. Schnitzler, N. M. Linke, J. Eble, and F. Schmidt-Kaler — Universität Ulm, Institut für Quanteninformationsverarbeitung, Albert-Einstein-Allee 11, D-89069 Ulm
We have realized a universal deterministic single ion source on the basis of an ion trap applicable to a wide range of elements and molecules[1]. Initially, cold 40Ca+ ion crystals are trapped within a segmented linear trap. Those ions are then deterministically extracted and shot into a detector at a distance of 25 cm from the trap. With single ions, more than 90% of these extractions were successful. The kinetic energy distribution of the ions amounts to less than 0.1%. We have also demonstrated the extraction of mixed crystals containing other dopant ions. For the implantation with nm precision, we plan to utilize an electrostatic Einzel-lens to further improve the spatial resolution of the extracted ions. These can then be used to generate color centers in diamond for optical detection or to implant P into Si. Both systems provide the foundation for the realization of a solid state quantum computer [2,3]. In addition, the electrical properties of semiconductor devices can be greatly enhanced by the deterministic implantation of single ions [4].
[1] J. Meijer et. al., Appl. Phys. A 83, 321 (2006).
[2] F. Jelezko et. al., Phys. Rev. Lett. 93, 130501 (2004).
[3] B. E. Kane, Nature 393, 133 (1998).
[4] T. Shinada et. al., Nature 437, 1128 (2005).