Berlin 2008 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 25: Trends in Ion Beam Technology: From the Fundamentals to the Application

DS 25.7: Vortrag

Donnerstag, 28. Februar 2008, 12:45–13:00, H 2013

Channeling irradiation of LiNbO₃ — •Tobias Steinbach, Frank Schrempel, Thomas Gischkat, and Werner Wesch — Institut für Festkörperphysik,Friedrich-Schiller-Universität Jena

The influence of the crystal orientation on the damage formation of x- and z-cut LiNbO₃ single crystals irradiated with 550 and 750 keV Si-ions was investigated. The irradiation was carried out along the corresponding axial channel as well as at different tilt angles. The damage accumulation was investigated by means of Rutherford Backscattering Spectrometry (RBS/C). Because the channelled ions are prevented from close collisions with the target atoms, the projected range of the ions is increased and the number of defects created by channelled ions at a certain ion fluence is less compared to a random irradiation. As a consequence the damage distribution is shifted to larger depths if the irradiation is performed along low index crystallographic directions. Selected samples were etched at 40^∘C in a HF-solution of 3.7% and 40%, respectively. Compared to the random irradiation with 550 keV Si-ions, the etched depth increases by a factor of 1.4 and 1.2 if the irradiation is carried out along the x- and the z-axis, respectively. From the dependence of the shift of the damage peak on the tilt angle a critical angle to avoid channeling of about 1.35^∘ was determined for 750 keV Si-ions.