Berlin 2008 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 28: Trends in Ion Beam Technology: From the Fundamentals to the Application

DS 28.4: Vortrag

Donnerstag, 28. Februar 2008, 17:00–17:15, H 2013

cavity layer introduction in SIMOX technology — •Xin Ou, Reinhard Kögler, Arndt Mücklich, Wolfgang Skorupa, and Wolfhard Möller — Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, PO Box 51 01 19, 01314 Dresden, Germany

Silicon On Insulator (SOI) is the next generation of integrated circuit technology and Separation by Implantation Oxygen (SIMOX) is one of the mainstream processes for SOI wafer fabrication. The high-dose oxygen implantation in commercial SIMOX process is the main disadvantage considering the wafer cost and quality. In this case, defect engineering is performed in SIMOX process, by introducing a cavity layer as a Oxygen gettering layer using low dose He, H in combination to O implantation and Internal Thermal OXidaiton (ITOX). The cavity layer will narrow the oxygen profile, enhance the growth rate of SiO₂ precipitates, and produce the vacancy defects recombining with the Oxidation released interstitials and reducing the strain in top Si layer. In this project, the width of the cavity layer, cavity size and position distribution, the percentage of empty volume are investigated in order to optimize the Oxygen gettering ability of the cavity layers by Transmission Electron Microscopy (TEM), Auger Electron Spectroscopy (AES), Fourier Transformed Infrared (FTIR) and Scanning Spreading Resistance Microscopy (SSRM). The thermodynamics and kinetics of the SiO₂ precipitates formation and the interaction between the SiO₂ precipitation and defects introduced by Oxygen and extra implantation were studied.