Berlin 2008 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 31: Application of Thin Films
DS 31.4: Vortrag
Donnerstag, 28. Februar 2008, 12:00–12:15, H 2032
The influence of dc sputtered ZnO:Al/a-Si:H/c-Si heterostructures — •René Köhler1,2, Andreas Schöpke2, Sviatoslav Shokhovets1, Gerhard Gobsch1, and Manfred Schmidt2 — 1Technische Universität Ilmenau, EXP I, Weimarer Straße 32, D-98693 Ilmenau, Germany — 2Hahn-Meitner-Institut Berlin, Kekuléstraße 5, D-12489 Berlin, Germany
Transparent conductive oxides (TCO`s) are an essential part of optoelectronic and photovoltaic devices. In ZnO:Al/a-Si/c-Si heterostructure solar cells, one cruicial point for the performance of the device are interface states at the a-Si/c-Si interface which may influence the band bending in c-Si at this interface. The aim of this work was to find out whether the ZnO:Al deposition by reactive dc magnetron sputtering does affect the properties of the a-Si:H/c-Si interface. For this purpose, the large signal photovoltage method (SPV; laser pulse excitation 910 nm, 162 ns pulse length) was used to measure the band bending in c-Si before and after ZnO:Al deposition and after removing the ZnO:Al film by etching in HCl. So, from the variation in the SPV signal we can draw conclusions about the influence of the sputter deposition process on the properties of the a-Si/c-Si interface.