Berlin 2008 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 41: Layer Deposition Processes
DS 41.3: Vortrag
Freitag, 29. Februar 2008, 15:00–15:15, H 2032
Interface roughness of MgO/Ti and ZrO2/Ti multilayers — •Tobias Liese, Andreas Meschede, and Hans-Ulrich Krebs — Institut für Materialphysik, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen
MgO/Ti and ZrO2/Ti multilayers with double layer periods in the nanometer range were deposited by pulsed laser deposition (PLD) on Si(111) substrates in ultrahigh vacuum. The roughness of these films was investigated by atomic force microscopy (AFM), X-ray reflectometry (XRR), and transmission electron microscopy (TEM), which are sensitive on the surface and interface roughness, respectively. In both cases, the Ti layer grows in island growth, while the layer-by-layer growth of MgO and ZrO2 layers leads to a smoothening of the layers. Therefore, with increasing number of bilayers no cumulative roughness is observed. The interfaces were studied by in-situ deposition rate and stress measurements. In this contribution, the underlying growth processes and their influence on the interface roughnesses are discussed.