Berlin 2008 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 42: Layer Growth: Evolution of Structure and Simulation
DS 42.2: Vortrag
Freitag, 29. Februar 2008, 16:30–16:45, H 2032
Molecular dynamics simulation study of the silicon carbide precipitation process — •Frank Zirkelbach1, Jörg K. N. Lindner1, Kai Nordlund2, and Bernd Stritzker1 — 1Experimentalphysik IV, Institut für Physik, Universität Augsburg, Universitätsstr. 1, D-86135 Augsburg, Germany — 2Accelerator Laboratory, Department of Physical Sciences, University of Helsinki, Pietari Kalmink. 2, 00014 Helsinki, Finland
The precipitation process of silicon carbide in heavily carbon doped silicon is not yet understood for the most part. High resolution transmission electron microscopy indicates that in a first step carbon atoms form C-Si dumbbells on regular Si lattice sites which agglomerate into large clusters. In a second step, when the cluster size reaches a radius of a few nm, the high interfacial energy due to the SiC/Si lattice misfit of almost 20A molecular dynamics simulation approach is used to gain information of the precipitation process on the atomic level. A newly parametrized Tersoff like bond-order potential is used to model the system appropriately. The present work discusses the first results gained by the molecular dynamics simulation.