Berlin 2008 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 7: Semiconductor Nanophotonics: Materials, Models, Devices - Surface Emitters

DS 7.2: Vortrag

Montag, 25. Februar 2008, 12:00–12:15, H 2032

12.5 Gbit/s 1250 nm VCSELs Based on Low-Temperature Grown Highly Strained InGaAs — •F. Hopfer¹, A. Mutig¹, G. Fiol¹, M. Kuntz¹, V.A. Shchukin¹, N. N. Ledentsov¹, C. Bornholdt³, S. S. Mikhrin², I. L. Krestnikov², D. A. Livshits², A. R. Kovsh², and D. Bimberg¹ — ¹Institut fuer Festkoerperphysik, Technische Universitaet Berlin, PN 5-2, Hardenbergstr. 36, 10623 Berlin, Germany — ²Innolume GmbH, Konrad-Adenauer-Allee 11, 44263 Dortmund, Germany — ³Fraunhofer Institut für Nachrichtentechnik, Heinrich-Hertz-Institut Berlin, Einsteinufer 37, 10587 Berlin, Germany

As frequencies increase, power consumption, signal attenuation, electromagnetic interference and crosstalk are limiting the performance of electrical interconnects. Optical solutions are thus increasingly considered for intrachip clock distribution and short distance chip-to-chip communication. For intra-chip applications the absorption of Si forces the emitters to operate above 1200 nm. Here we realized 12.5 Gb/s GaAs based VCSELs emitting at 1250 nm.

Multimode devices demonstrate at 25 °C a maximum modulation bandwidth of 8.5 GHz, their peak differential efficiency is 0.4 W/A. At the respective bias point the optical output power in a 65.5 muem multi mode fiber is 3 mW. Open eyes for a 12.5 Gb/s non-return-to-zero 2^31-1 pseudo random bit sequence at 25° C are achieved with a signal to noise ratio of 5.6. For single mode devices with a SMSR > 40 dB, the maximum modulation bandwidth at 25 °C is 9 GHz with a multimode fiber coupled optical output power of 1.5 mW.