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Berlin 2008 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 10: Preparation and characterization

HL 10.4: Talk

Monday, February 25, 2008, 10:15–10:30, EW 202

Preparation and tunneling characteristics of MOS structures for Si-based IR light emitters — •Stephan Suckow1, Martin Kittler1,2, Winfried Seifert1,2, Tzanimir Arguirov1,2, Manfred Schmidt3, Bert Stegemann3, and Heike Angermann31IHP/BTU JointLab, Konrad-Wachsmann-Allee 1, 03046 Cottbus, Germany — 2IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany — 3Hahn-Meitner-Institut Berlin, Kekuléstraße 5, 12489 Berlin, Germany

Si based light emitters, such as MOS structures based on dislocation networks, are attractive candidates for the generation of electroluminescence in the IR spectral range to be applied e.g. in optical on-chip interconnects. In the present work the preparation of an appropriate MOS structure that facilitates efficient charge carrier injection is explored and its charge carrier tunneling and recombination characteristics are analyzed. In this respect MOS structures with ultra-thin tunnel oxides fabricated by wet-chemical oxidation of Si wafers and thermally deposited Ti contacts turned out to produce the most efficient and reliable results. Moreover, electroluminescence measurements revealed an anomalous temperature behavior of band-to-band recombination with enhanced intensity at higher temperature (300 K). As photoluminescence intensity inversely increases with decreasing temperature, this effect is clearly correlated to efficient minority charge carrier injection via the MOS contact and points towards an application as room temperature IR light emitter.

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