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So, 14:00–17:00 |
ER 270 |
HL 0: Tutorial: Graphene |
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Mo, 09:30–10:15 |
ER 270 |
HL 1: Invited Talk Kümmell |
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Mo, 10:15–11:00 |
ER 270 |
HL 2: Invited Talk Knorr |
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Mo, 11:15–13:00 |
ER 270 |
HL 3: Quantum dots: Microcavities and photonic crystals |
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Mo, 14:00–14:45 |
ER 270 |
HL 4: Invited Talk Goldhahn |
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Mo, 15:00–18:15 |
ER 270 |
HL 5: Symposium Nanostructured Photonic Materials |
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Mo, 09:30–11:30 |
EW 201 |
HL 6: Photonic crystals I |
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Mo, 11:30–13:00 |
EW 201 |
HL 7: II-VI semiconductors |
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Mo, 14:00–15:00 |
EW 201 |
HL 8: Interfaces/ surfaces |
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Mo, 15:00–18:30 |
EW 201 |
HL 9: ZnO: Preparation and characterization I |
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Mo, 09:30–10:45 |
EW 202 |
HL 10: Preparation and characterization |
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Mo, 11:00–13:00 |
EW 202 |
HL 11: C/diamond |
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Mo, 14:00–16:15 |
EW 202 |
HL 12: Photovoltaic |
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Mo, 16:15–17:30 |
EW 202 |
HL 13: Theory of electronic structure |
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Mo, 09:30–11:15 |
ER 164 |
HL 14: Heterostructures |
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Mo, 11:15–13:00 |
ER 164 |
HL 15: Devices |
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Mo, 14:00–17:15 |
ER 164 |
HL 16: Quantum dots and wires: Optical properties I |
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Mo, 16:30–19:00 |
Poster D |
HL 17: Poster I |
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Di, 09:30–10:15 |
ER 270 |
HL 18: Invited Talk Buhmann |
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Di, 10:30–13:00 |
ER 270 |
HL 19: Symposium Spin Effects in Semiconductors of Reduced Dimensionality |
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Di, 14:15–15:00 |
ER 270 |
HL 20: Invited Talk Worschech |
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Di, 15:15–17:45 |
ER 270 |
HL 21: Symposium Semiconductor Nanowires |
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Di, 09:30–11:00 |
EW 201 |
HL 22: Hybrid systems |
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Di, 11:00–13:00 |
EW 201 |
HL 23: Quantum dots and wires: Transport properties I |
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Di, 09:30–13:15 |
EW 202 |
HL 24: Photonic crystals II |
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Di, 14:15–15:30 |
EW 202 |
HL 25: Spin controlled transport I |
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Di, 15:45–18:15 |
EW 202 |
HL 26: III-V semiconductors I |
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Di, 16:00–19:00 |
EW 203 |
HL 27: Photonic crystals III |
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Di, 09:30–12:00 |
ER 164 |
HL 28: Transport properties |
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Di, 12:00–13:15 |
ER 164 |
HL 29: New materials |
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Di, 14:15–17:45 |
ER 164 |
HL 30: Quantum dots and wires: Transport properties II |
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Di, 16:30–19:00 |
Poster D |
HL 31: Poster II |
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Mi, 14:15–17:45 |
ER 270 |
HL 32: Quantum dots and wires: preparation and characterization I |
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Mi, 14:15–18:30 |
EW 201 |
HL 33: III-V semiconductors II |
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Mi, 14:15–17:30 |
EW 202 |
HL 34: Semiconductor Laser |
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Mi, 14:15–17:45 |
ER 164 |
HL 35: Spin controlled transport II |
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Mi, 16:30–19:00 |
Poster D |
HL 36: Poster III |
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Do, 09:30–10:15 |
ER 270 |
HL 37: Invited Talk Chatterjee |
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Do, 10:15–11:00 |
ER 270 |
HL 38: Invited Talk Korn |
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Do, 11:15–13:00 |
ER 270 |
HL 39: Ultra fast phenomena |
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Do, 14:00–14:45 |
ER 270 |
HL 40: Invited Talk Hannewald |
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Do, 15:00–17:30 |
ER 270 |
HL 41: Organic semiconductors |
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Do, 09:30–13:00 |
EW 201 |
HL 42: Optical Properties of Quantum dots: Theory and Simulation |
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Do, 14:00–16:30 |
EW 201 |
HL 43: Quantum dots and wires: Optical properties II |
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Do, 16:45–18:30 |
EW 201 |
HL 44: Quantum dots and wires: preparation and characterization II |
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Do, 09:30–11:45 |
EW 202 |
HL 45: GaN devices |
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Do, 11:45–12:45 |
EW 202 |
HL 46: Transport in high magnetic field/quantum-Hall-effect |
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Do, 14:00–17:30 |
EW 202 |
HL 47: GaN: preparation and characterization I |
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Do, 09:30–10:30 |
ER 164 |
HL 48: ZnO: Preparation and characterization II |
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Do, 10:45–13:00 |
ER 164 |
HL 49: ZnO: Optical properties |
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Do, 14:00–15:45 |
ER 164 |
HL 50: ZnO: Tansport |
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Do, 16:30–19:00 |
Poster D |
HL 51: Poster IV |
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Fr, 10:30–13:00 |
ER 270 |
HL 52: Symposium Semiconducting Nanoparticles for Nano-Optics and Optoelectronics |
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Fr, 10:30–14:00 |
EW 201 |
HL 53: Optical properties |
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Fr, 10:30–15:00 |
EW 202 |
HL 54: Si/Ge |
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Fr, 10:30–13:45 |
ER 164 |
HL 55: GaN: preparation and characterization II |
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