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Berlin 2008 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 51: Poster IV

Donnerstag, 28. Februar 2008, 16:30–19:00, Poster D

16:30 HL 51.1 Redistribution of excitonic photoluminescence transitions mediated by surface acoustic waves — •Stefan Völk, Jens Ebbecke, Achim Wixforth, Dirk Reuter, and Andreas Wieck
16:30 HL 51.2 Determination of exciton mass in Cu20 by two-phonon-spectroscopyJan Brandt, Dietmar Fröhlich, •Christian Sandfort, Manfred Bayer, and Heinrich Stolz
16:30 HL 51.3 Optical investigations of hexagonal MgxZn1−xO thin layers in UV spectral range — •Alexander Müller, Gabriele Benndorf, Susanne Heitsch, Holger Hochmuth, Christoph Meinecke, and Marius Grundmann
16:30 HL 51.4 Generation of a Single-cycle Terahertz Pulse through Shaped Ultrafast Laser Pulses — •Andreas Vaupel, Kapil Kohli, Sangam Chatterjee, and Wolfgang W. Rühle
16:30 HL 51.5 Manipulation von Exitonen in III/V- und II/VI-Heterostrukturen mittels akustischer Oberflächenwellen — •Daniel Fuhrmann, Jens Ebbecke, Stefan Völk und Achim Wixforth
16:30 HL 51.6 Calculations of the optical properties of ZnO microcavities for Bose-Einstein condensation — •Chris Sturm, Rüdiger Schmidt-Grund, Jan Sellmann, Helena Hilmer, Bernd Rheinländer, Michael Lorenz, and Marius Grundmann
16:30 HL 51.7 Studies of linear absorption in weakly disordered semiconductors - Comparison of various approaches — •Noémi Gögh, Walter Hoyer, Peter Bozsoki, Irina Kuznetsova, Mackillo Kira, Peter Thomas, and Stephan W. Koch
16:30 HL 51.8 Investigation of the optical properties of phase change alloys — •Konstantin Shportko, Stephan Kremers, Michael Woda, Wojciech Wełnic, and Matthias Wuttig
16:30 HL 51.9 FTIR and Raman study of AIIBV2 single crystals at low temperatures. — •Konstantin Shportko, Reinhard Rückamp, Matthias Wuttig, Yurij Pasechnik, Vladimir Trukhan, and Tatiana Haliakevich
16:30 HL 51.10 Über lineare Response-Theorie hinausgehende Behandlung zeitabhängiger Störungen: Anwendung auf HL-Quantenpunkte — •Jakob Ebeling und Gerd Czycholl
16:30 HL 51.11 Electroluminiscence study of site-selective grown self-assembled InAs quantum dots — •Minisha Mehta, Dirk Reuter, Alexander Melnikov, and Andreas D. Wieck
16:30 HL 51.12 Rolled-up Metal Semiconductor Tubes as Building Blocks for MetamaterialsNils Gerken, •Stephan Schwaiger, Markus Broell, Detlef Heitmann, and Stefan Mendach
16:30 HL 51.13 Raman scattering on a series of phase-change material (GeTe, Sb2Te3, Ge15Sb85, and GexSbyTez) — •Judith Hinterberg, Reinhard Rückamp, Michael Woda, Matthias Wuttig, Gernot Güntherodt, and Markus Grüninger
16:30 HL 51.14 Kinetics of high density excitons in a potential trap — •Rico Schwartz, Nobuko Naka, Dietmar Fröhlich, Jan Brandt, Christian Sandfort, and Heinrich Stolz
16:30 HL 51.15 Second-Harmonic Generation in Gallium Selenide (GaSe) as Investigated with cw Diode Lasers — •Peter Karich, Lothar Kador, Kerim R. Allakhverdiev, Tarik Baykara, and Eldar Salaev
16:30 HL 51.16 Investigating transport properties of crystalline chalcogenide phase change alloys — •Stephan Kremers, Kostiantyn Shportko, Michael Woda, and Matthias Wuttig
16:30 HL 51.17 Towards efficient detection of single photons at telecommunication wavelengths — •Gesine Steudle, Sander Dorenbos, Ingmar Müller, Elisabeth Reiger, Val Zwiller, and Oliver Benson
16:30 HL 51.18 Annealing effects on the crystalline resistivity of phase change materials — •Michael Woda, Stephan Kremers, Kostiantyn Shportko, and Matthias Wuttig
16:30 HL 51.19 Surface plasmon polaritons in metal-semiconductor hybrid structures — •Patrick Scholz, Stephan Schwieger, David Leipold, and Erich Runge
16:30 HL 51.20 Wigner-cystalline order and massless Dirac fermions in 2 DES at high magnetic fields — •Guenther Meissner
16:30 HL 51.21 Magnetotransportuntersuchungen an gekrümmten zweidimensionalen Elektronensystemen in Halbleiter-Mikroröllchen mit spezieller Kontaktgeometrie — •Karen Peters, Olrik Schumacher, Andrea Stemmann und Wolfgang Hansen
16:30 HL 51.22 Micromechanical cantilever magnetometer with in situ tunable sensitivity on a rotational stage — •Wolfgang Krenner, Xuting Huang, Tjark Windisch, Marc A. Wilde, and Dirk Grundler
16:30 HL 51.23 De Haas-van Alphen effect in two-component two-dimensional electron systems — •X. Huang, T. Windisch, S. Dasgupta, M. A. Wilde, A. Fontcuberta i Morral, M. Grayson, G. Abstreiter, and D. Grundler
16:30 HL 51.24 Fiber optical interferometer for ultra-sensitive displacement detection in cryogenic and high magnetic field environment. — •Martin Borowski, Tjark Windisch, Marc A. Wilde, and Dirk Grundler
16:30 HL 51.25 Magnetotransport measurements on a GaAs/GaAlAs high mobility sample — •Lina Bockhorn, Frank Hohls, Werner Wegscheider, and Rolf J. Haug
16:30 HL 51.26 Long-lived hole spin dynamics in a 2D system at sub-Kelvin temperatures — •Anton Wagner, Tobias Korn, Robert Schulz, Andreas Maurer, Michael Hirmer, Dieter Schuh, Werner Wegscheider, and Christian Schüller
16:30 HL 51.27 Phonon-induced carrier relaxation and hot phonon dephasing dynamics in graphene — •Frank Milde, Stefan Butscher, Ermin Malic, Matthias Hirtschulz, and Andreas Knorr
16:30 HL 51.28 On the doping of Si nanowires grown by molecular-beam epitaxy — •Pratyush Das Kanungo, Otwin Breitenstein, Peter Werner, Nikolai Zakharov, and Ulrich Goesele
16:30 HL 51.29 Charge accumulation in a type-II Ge/Si-heterostructureChristoph Henkel, Gisela Biehne, Marius Grundmann, Gerald Wagner, Mathieu Stoffel, Oliver Schmidt, and •Heidemarie Schmidt
16:30 HL 51.30 MBE-growth and analysis of Si and Ge nanowires and corresponding heterostructures — •Andreas Wolfsteller, Pratyush Das Kanungo, Trung-Kien Nguyen-Duc, Gerhard Gerth, Nikolai Zakharov, Peter Werner, and Ulrich Gösele
16:30 HL 51.31 I-V - Characteristics of chalcogenide glasses during threshold switching — •Hanno Volker, Carl Schlockermann, Gunnar Bruns, and Matthias Wuttig
16:30 HL 51.32 Pressure-induced phase transition in Cu3N — •Komalavalli Thirunavukkuarasu, Dieter Rau, Rainer Niewa, and Christine A Kuntscher
16:30 HL 51.33 High pressure investigations of the Mott insulator GaV4S8Xin Wang, •Martin K. Forthaus, Karl Syassen, Ingo Loa, Dirk Johrendt, and Mohsen M. Abd-Elmeguid
16:30 HL 51.34 Anomalously localized states at the metal-insulator transition in the Anderson model of localization — •Philipp Cain and Michael Schreiber
16:30 HL 51.35 Investigations of the Quality of MgxZn1−xO-ZnO Quantum Well Interfaces grown by pulsed laser deposition — •Martin Lange, Susanne Heitsch, Gabriele Benndorf, Holger Hochmuth, Michael Lorenz, and Marius Grundmann
16:30 HL 51.36 White luminescence of vanadium implanted ZnO PLD films — •Sven Müller, Carsten Ronning, Michael Lorenz, Christian Czekalla, Gabriele Benndorf, Holger Hochmuth, Marius Grundmann, and Heidemarie Schmidt
16:30 HL 51.37 Structural properties of ZnO Nanorods before and after Ga-Implantation in a Focused-Ion-Beam-System — •Michael Dürrschnabel, Daniel Weissenberger, Dagmar Gerthsen, Anton Reiser, Günther Prinz, Martin Feneberg, Klaus Thonke, and Rolf Sauer
16:30 HL 51.38 Magneto transport properties of codoped ZnCoO — •Christoph Knies, Matthias T. Elm, Jan Stehr, Peter J. Klar, Detlev M. Hofmann, Tom Kammermeier, Andreas Ney, and Nikolai Romanov
16:30 HL 51.39 Tunnelling process in ZnSe/ZnMnSe double-quantum-well structures — •Stephanie Jankowski, Tobias Niebling, and Wolfram Heimbrodt
16:30 HL 51.40 Epitaxial ferroelectric BTO/ZnO heterostructures — •Brandt Matthias, Holger Hochmuth, Michael Lorenz, Nurdin Ashkenov, Matthias Schubert, Venkata Voora, and Marius Grundmann
16:30 HL 51.41 Magneto-transport measurements on artifically structured ZnO epitaxial layers — •Matthias T. Elm, Stefan Lautenschläger, Torsten Henning, and Peter J. Klar
16:30 HL 51.42 Epitaxially grown artificially structured ZnO layers investigated by thermoelectric measurements — •Gert Homm, Jörg Teubert, Stefan Lautenschläger, Torsten Henning, Peter J. Klar, and Bruno K. Meyer
16:30 HL 51.43 Empirical pseudopotential calculation of strain induced birefringence in ZnODaniel Fritsch and •Heidemarie Schmidt
16:30 HL 51.44 Artificially structured epitaxially grown ZnO layers investigated by transport measurements — •Markus Piechotka, Matthias T. Elm, Sebastian Eisermann, Achim Kronenberger, Thomas Wassner, Torsten Henning, Martin Eickhoff, Peter J. Klar, and Bruno K. Meyer
16:30 HL 51.45 Zeitaufgelöste Photolumineszenz an Zinkoxidnanoröhren: Einfluss der Oberfläche und Identifikation einer Oberflächensignatur — •Alexej Chernikov, Swantje Horst, Sangam Chatterjee, Wolfgang Rühle, Peter K. Klar und Michael Tiemann
16:30 HL 51.46 n-type doped ZnO nanorods for heterostructure application — •Janos Sartor, Hujuan Zhou, Johannes Fallert, Felix Stelzel, Roman J. B. Dietz, Mario Hauser, Claus Klingshirn, and Heinz Kalt
16:30 HL 51.47 Density-Functional Tight-Binding Calculations on Functionalized ZnO Surfaces — •Ney Henrique Moreira, Andreia Luisa da Rosa, and Thomas Frauenheim
16:30 HL 51.48 Polarisation dependence of the free discrete exciton luminescence in ZnO microwires — •Rüdiger Schmidt-Grund, Helena Hilmer, Christian Czekalla, Bingqjang Cao, Chris Sturm, and Marius Grundmann
16:30 HL 51.49 Magneto-optical properties of ZnO with Mn ion-beam implantationLimei Chen, Samer Al-Azzaui, •Wolfram Heimbrodt, Daniel Stichenoth, Sven Müller, and Carsten Ronning
16:30 HL 51.50 CVD growth of ZnMgO — •Sebastian Eisermann, Stefan Lautenschläger, Joachim Sann, Niklas Volbers, Markus Piechotka, Peter J. Klar, and Bruno K. Meyer
16:30 HL 51.51 Magneto-optic photoluminescence and spin flip Raman spectroscopy on Cd1−xMnxTe/Cd1−yMgyTe quantum well samples — •Christian Kehl, Georgy Astakhov, Jean Geurts, and Wolfgang Ossau
16:30 HL 51.52 Characterisation of deep defects in ZnO thin films by means of optical deep level transient spectroscopy — •Martin Ellguth, Robin Weirauch, Matthias Schmidt, Holger von Wenckstern, Rainer Pickenhain, and Marius Grundmann
16:30 HL 51.53 Study of the solubility limits and secondary phase formation for ZnO:TM (TM = V, Fe, Co, Ni) mixed crystals by Raman spectroscopy — •Martin Koerdel, Marcel Schumm, Fabian Bach, Huijuan Zhou, Wojciech Szuszkiewicz, Sven Mueller, Carsten Ronning, and Jean Geurts
16:30 HL 51.54 Sputter deposition of ZnO thin films at high substrate temperatures — •Achim Kronenberger, Sebastian Eisermann, Andreas Laufer, Swen Graubner, Angelika Polity, and Bruno K. Meyer
16:30 HL 51.55 Polycrystalline Mn-alloyed indium tin oxide films — •Camelia Scarlat, Heidemarie Schmidt, Qingyu Xu, Mykola Vinnichenko, Andreas Kolitsch, Manfred Helm, and Felicia Iacomi
16:30 HL 51.56 The structural impact of Mn implantation on a ZnO host lattice and the magnetic interaction of the implanted Mn ions studied by Raman scattering and Electron Paramagnetic Resonance — •Marcel Schumm, Martin Koerdel, Sven Mueller, Hayo Zutz, Carsten Ronning, Jan Stehr, Detlev M. Hofmann, and Jean Geurts
16:30 HL 51.57 Effect of Se predeposition on the electronic and structural porperties of n-ZnSe layers grown on n-GaAs(001) by molecular beam epitaxy — •Alexander Frey, Suddhosatta Mahapatra, Claus Schumacher, Laurens W. Molenkamp, and Karl Brunner
16:30 HL 51.58 Investigation and analysis of ZnS substrates — •Oliver Graw, Stefan Lautschläger, Joachim Sann, Niklas Volbers, Swen Graubner, Andreas Laufer, Dietrich Schwabe, Bruno K. Meyer, Jürgen Bläsing und Alois Krost
16:30 HL 51.59 Donor doping of ZnO with group VII elements — •Melanie Pinnisch, Joachim Sann, Niklas Volbers, Andreas Laufer, Sebastian Zöller, Stefan Lautenschläger, Kay Potzger, and Bruno K. Meyer
16:30 HL 51.60 Determination of charge state in Co- and Mn-doped ZnO films — •Daniel Markó, Kay Potzger, Karsten Küpper, Qingyu Xu, Shengqiang Zhou, Heidemarie Schmidt, Jürgen Faßbender, Michael Lorenz, Elke Arenholz, and Jonathan D. Denlinger
16:30 HL 51.61 Characterization of MgxZn1−xO-layers grown by plasma assisted molecular beam epitaxy — •Bernhard Laumer, Thomas A. Wassner, Stefan Maier, Jochen Bruckbauer, Martin Stutzmann, and Martin Eickhoff
16:30 HL 51.62 Comparison of the crystalline and optical properties of VLS- and VS-grown ZnO nanopillars — •Anton Reiser, Vahid Raeesi, Dalia Omar Zayan, Günther M. Prinz, Martin Schirra, Martin Feneberg, Klaus Thonke, and Rolf Sauer
16:30 HL 51.63 Arsenic-doping of ZnONiklas Volbers, Stefan Lautenschläger, •Thomas Leichtweiss, Andreas Laufer, Swen Graubner, Bruno K. Meyer, Kay Potzger, and Shengqiang Zhou
16:30 HL 51.64 Structure, phase stability, and gaps of wurtzite MgZnO and CdZnO alloys — •Matthias Eisenacher, André Schleife, Lara Kühl Teles, Jürgen Furthmüller, and Friedhelm Bechstedt
16:30 HL 51.65 Optimization of PLD grown ZnO thin films using in-situ RHEED — •Alexander Hirsch, Christian Wille, Frank Ludwig, and Meinhard Schilling
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