Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 51: Poster IV
HL 51.35: Poster
Donnerstag, 28. Februar 2008, 16:30–19:00, Poster D
Investigations of the Quality of MgxZn1−xO-ZnO Quantum Well Interfaces grown by pulsed laser deposition — •Martin Lange, Susanne Heitsch, Gabriele Benndorf, Holger Hochmuth, Michael Lorenz, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Linnéstr. 5, D-04103 Leipzig, Germany
MgxZn1−xO-ZnO single quantum wells with x ∼ 0.2 and nominal thickness of 4 nm have been grown on a-plane sapphire substrates by pulsed laser deposition. The samples were grown at an oxygen pressure of 2 × 10−3 mbar and a temperature of ∼620 ∘C. Before and after the deposition of the quantum well, growth interruptions with a duration of up to 10 minutes were performed. During the growth interruption the growth parameters have been kept constant. The samples have been investigated with photoluminescence at room temperature and at 2 K and atomic force microscopy. At low temperature a small blueshift as well as an increase of the full width at half maximum value of the quantum well peaks were observed for longer interruptions. The roughness of the interfaces within each sample was estimated by calculating a roughness parameter from the peak position and the width of the peak. A quantum well with finite barrier height was used as a model. Possible reasons for the blueshift will be suggested.