Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 51: Poster IV
HL 51.36: Poster
Donnerstag, 28. Februar 2008, 16:30–19:00, Poster D
White luminescence of vanadium implanted ZnO PLD films — •Sven Müller1, Carsten Ronning1, Michael Lorenz2, Christian Czekalla2, Gabriele Benndorf2, Holger Hochmuth2, Marius Grundmann2, and Heidemarie Schmidt3 — 1II. Physikalisches Institut, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany — 2Institut für Experimentelle Physik II, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany — 3Forschungszentrum Dresden-Rossendorf e.V., Bautzner Landstraße 128, 01328 Dresden, Germany
Pulsed laser deposited ZnO films were implanted with vanadium ions using ion energies between 30 and 250 keV in order to create a box-like doping profile. Different fluences yielded into vanadium concentrations of 0.8, 2.5 and 5 at.%, and a reference sample was implanted with Ar. After annealing under oxygen ambient at 800°C, broad yellow, green, and blue photoluminescence bands were observed for all V-implanted ZnO samples whereas the Ar-implanted ZnO sample exhibits a red-yellow luminescence band. The green luminescence band of V-implanted ZnO shows a modulated fine structure and the complete luminescence reveals a white color in the eye of the beholder. Therefore, the light emission was quantified using the color space map of the Commission internationale de l'Éclairage (CIE). The origin of the red-yellow and green luminescence as well as the luminescence emission properties will be discussed in the presentation.