Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 51: Poster IV
HL 51.50: Poster
Donnerstag, 28. Februar 2008, 16:30–19:00, Poster D
CVD growth of ZnMgO — •Sebastian Eisermann, Stefan Lautenschläger, Joachim Sann, Niklas Volbers, Markus Piechotka, Peter J. Klar, and Bruno K. Meyer — I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen, Germany
ZnMgO thin films and heterostructures grown by MOCVD usually require quite high substrate temperatures (approx. 800∘C - 900∘C), at high growth temperatures both, n-type and p-type doping, is quite difficult. It was our aim to explore the growth of ZnMgO thin films using a CVD process at much lower substrate temperatures. The growth temperature was between 550∘C and 700∘C. We used metallic precursors (Zn, Mg) and NO2 as oxygen precursor. The grown thin films have been investigated by low temperature photoluminescence, the magnesium content was determined by SIMS and EDX. We were able to produce samples with a homogenious Mg concentration as well as samples with a linear gradient of the Mg concentration (0% - 3%) over the thin film surface. The band-edge photoluminescence shows a linear dependence on the Mg content, same for the shift of the Raman modes. The maximum magnesium content in our samples was 14 +/- 2 %.