Berlin 2008 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 51: Poster IV

HL 51.18: Poster

Donnerstag, 28. Februar 2008, 16:30–19:00, Poster D

Annealing effects on the crystalline resistivity of phase change materials — •Michael Woda, Stephan Kremers, Kostiantyn Shportko, and Matthias Wuttig — I. Insitute of Physics (IA), RWTH Aachen University, Germany

Phase change materials (PCM) show a pronounced property contrast (electrical resistivity, optical reflectivity) between the amorphous and the crystalline state and fast crystallization processes. Suitable PCM can be reversibly switched between the states with either a current or laser pulse on a ns timescale. They are utilized in rewritable optical data storage and the emerging non-volatile memory PRAM. The latter is expected to replace Flash memory in the near future. The electrical conduction properties of different PCM have to be characterized and understood in order to find superior PCM for promising PRAM applications. In this study the effect of different annealing conditions on the electrical resistivity of various PCM in the crystalline state is investigated. Our data are compared with other techniques including x-ray reflectometry and x-ray diffraction to understand the nature of the resistance changes observed upon annealing.