Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 51: Poster IV
HL 51.44: Poster
Donnerstag, 28. Februar 2008, 16:30–19:00, Poster D
Artificially structured epitaxially grown ZnO layers investigated by transport measurements — •Markus Piechotka1, Matthias T. Elm1, Sebastian Eisermann1, Achim Kronenberger1, Thomas Wassner2, Torsten Henning1, Martin Eickhoff2, Peter J. Klar1, and Bruno K. Meyer1 — 1Institute of Experimental Physics I, Justus Liebig University, Heinrich Buff Ring 16, D 35392 Giessen, Germany — 2Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, D-85748 Garching, Germany
Several n-type ZnO layers were grown heteroepitaxially on Al2O3 substrates either by MBE with a thickness of 300 nm to 400 nm on a 20 nm MgO buffer layer or by cathode sputtering with a thickness of 1100 nm. Stripes of the as grown samples were artificially structured by photolithography. Each pattern consists of two contact pads with a regular array of wires of the same width in between. The wire thickness varies throughout the series of patterns from 4 µm to 1000 µm whereas the total cross section area of the wires is kept constant. The patterns were transferred either by wet-chemical etching or by ion-beam etching. The resistance of the wire patterns was measured in the temperature range from 2 to 300 K and in magnetic fields of 0 to 10 T. The analysis of the resistivity as a function of wire width yields information about the depth of the surface damage caused during the etch process.