Berlin 2008 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 51: Poster IV

HL 51.59: Poster

Donnerstag, 28. Februar 2008, 16:30–19:00, Poster D

Donor doping of ZnO with group VII elements — •Melanie Pinnisch¹, Joachim Sann¹, Niklas Volbers¹, Andreas Laufer¹, Sebastian Zöller¹, Stefan Lautenschläger¹, Kay Potzger², and Bruno K. Meyer¹ — ¹I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen, Germany — ²Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, P.O. Box 51 01 19, 01314 Dresden, Germany

In order to produce ZnO-based devices not only p-type doping, but also controlled n-type doping is essential. For the group VII elements F, Cl, Br, I substituting O neither their donor levels nor their influence on photoluminescence spectra have been intensely studied. In this work we doped ZnO single crystals with F, Cl, Br or I by diffusion through the surface and by ion implantation with fluences of about 10¹⁴ ions/cm². The samples have been investigated by Secondary Ion Mass Spectroscopy to verify the dopant incorporation. Low temperature high resolution photoluminescence measurements have been performed to identify the respective donor bound exciton recombination. We will make a correlation between doping and PL-recombinations.