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14:15 |
HL 33.1 |
Measurement of 002 structure factors for GaAs from electron spot diffraction patterns — Knut Müller, •Marco Schowalter, Andreas Rosenauer, Jacob Jansen, John Titantah, and Dirk Lamoen
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14:30 |
HL 33.2 |
Optical studies on surface passivation by both wet-chemical sulfur treatment and epitaxial core-shell growth of GaAs Nanowires — •Steffen Münch, Niklas Sköld, Stephan Reitzenstein, Johanna Trägardh, Alexander Gorbunov, Martin Kamp, Lars Samuelson, and Alfred Forchel
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14:45 |
HL 33.3 |
Swift heavy ion irradiation for recovery from implantation defects of GaN — •Anne-Katrin Nix, Sven Müller, Carsten Ronning, Andrey Kamarou, Elke Wendler, Werner Wesch, Christina Trautmann, and Hans Hofsäss
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15:00 |
HL 33.4 |
Effects of localized Boron states on the transport properties of n-BGaInAs — •Jörg Teubert, Peter J. Klar, Wolfram Heimbrodt, Andrew Lindsay, and Eoin P. O'Reilly
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15:15 |
HL 33.5 |
Optical properties of InN layers grown by high pressure CVD — •Ronny Kirste, Mustafa Alevli, Markus R. Wagner, Christian Thomsen, Nikolaus Dietz, and Axel Hoffmann
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15:30 |
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15 min. break
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15:45 |
HL 33.6 |
Morphologische und strukturelle Untersuchungen an AlInN auf GaN/Si(111) — •Aniko Gadanecz, Jürgen Bläsing, Armin Dadgar, Christoph Hums, Thomas Hempel, Jürgen Christen und Alois Krost
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16:00 |
HL 33.7 |
Eigenschaften des In-Defekt-Komplexes im III-V-Halbleiter AlN — •Bettina Steitz und Reiner Vianden
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16:15 |
HL 33.8 |
Strain fields in the vicinity of nanoindentions on (100) surfaces of GaAs — •Christian Röder, Gert Irmer, Michael Schaper, Ralf Hammer, and Manfred Jurisch
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16:30 |
HL 33.9 |
Nanofabrication of surface templates for low and high density quantum dots formation — •Tino Pfau, Aleksander Gushterov, and Johann Peter Reithmaier
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16:45 |
HL 33.10 |
Enhancing nitrogen solubility in diluted nitrides by surface kinetics: An ab initio study — •Hazem Abu-Farsakh and Jörg Neugebauer
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17:00 |
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15 min. break
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17:15 |
HL 33.11 |
MOVPE Growth of Antimonides on InP Substrate — •Christian Grasse, Ralf Meyer, Gerhard Böhm, and Markus-Christian Amann
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17:30 |
HL 33.12 |
Core levels, valence band structure and unoccupied states of clean InN surfaces — •Marcel Himmerlich, Anja Eisenhardt, Juergen A. Schaefer, and Stefan Krischok
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17:45 |
HL 33.13 |
Increased binding energy of impurities near a semiconductor-vacuum interface — A.P. Wijnheijmer, •J.K. Garleff, P.M. Koenraad, K. Teichmann, M. Wenderoth, S. Loth, and R.G. Ulbrich
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18:00 |
HL 33.14 |
Manipulation of charge on a single donor atom by Scanning Tunneling Microscopy — •K. Teichmann, M. Wenderoth, S. Loth, R.G. Ulbrich, J.K. Garlef, A.P. Wijnheijmer, and P.M. Koenraad
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18:15 |
HL 33.15 |
Selective etching of independent contacts in a double quantum-well structure: quantum-gate transistor — •Stefan Lang, Lukas Worschech, Monika Emmerling, Micha Strauß, Sven Höfling, and Alfred Forchel
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