Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 33: III-V semiconductors II
HL 33.5: Vortrag
Mittwoch, 27. Februar 2008, 15:15–15:30, EW 201
Optical properties of InN layers grown by high pressure CVD — •Ronny Kirste1, Mustafa Alevli2, Markus R. Wagner1, Christian Thomsen1, Nikolaus Dietz2, and Axel Hoffmann1 — 1Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany — 2Department of Physics and Astronomy, Georgia State University (GSU), Atlanta, GA
Including Indium Nitride (InN) into the ternary Ga1−xAlxN system enables the fabrication of tunable emitters operating from the infrared to the ultraviolet wavelength regime. At present, the growth of InN with chemical vapour deposition is still a great challenge due to low growth temperatures required to stabilize the compound. The use of a novel high pressure chemical vapour deposition (HPCVD) system allows to grow single crystalline high quality InN at temperatures up to 950∘C at reactor pressures around 15 bar. We present micro-Raman analysis results on InN samples fabricated under different growth conditions and on different substrate templates. Analyzing the non-polar strain sensitive E2(high) mode we evaluate the crystalline quality and strain in those samples. Additionally, luminescence measurements on those samples were performed. We discuss the spectra regarding the band edge and correlate the results with the data obtained from Raman spectroscopy.