Berlin 2008 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 33: III-V semiconductors II

HL 33.11: Vortrag

Mittwoch, 27. Februar 2008, 17:15–17:30, EW 201

MOVPE Growth of Antimonides on InP Substrate — •Christian Grasse, Ralf Meyer, Gerhard Böhm, and Markus-Christian Amann — Walter Schottky Institut, Technische Universität München

Electrically tunable Lasers like the Tunable Twin Guide Laser play an important role in the optical fiber telecommunication and are based on the principle of the plasma effect. Due to the injection of carriers in a tuning zone with a separate controllable current the emission wavelength of the lasers can be changed. To avoid heating of the laser, which would counteract the electrically tuning effect, requires to decrease the recombination of holes and electrons in the tuning zone, so that just a little current is needed for wavelength matching. A Typ-II heterostructure accomplishes this task due to the local separation of the carriers. For good partition high bandoffsets are needed, which is achieved by the aluminium free combination of GaInAsP and the barely explored alloy GaInPSb.

Growth via a MOVPE reactor and characterisation of GaInPSb on InP substrate in a temperature range of 500 to 575°C are presented. As precursors TMGa, TEGa, TMIn, TMSb and Phosphin are used with hydrogen as carrier gas. SIMS-, XPS-, Hall-, and photoluminescence measurements show an unexpected growth behaviour and evidence of clustering, which would limit an application in a device. To illustrate the difficulties of growing materials, which contain phosphor and antimony, comparative growth studies of GaPSb, InPSb, GaAsSb and GaInAsSb have been done and will be discussed.