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Berlin 2008 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 33: III-V semiconductors II

Wednesday, February 27, 2008, 14:15–18:30, EW 201

14:15 HL 33.1 Measurement of 002 structure factors for GaAs from electron spot diffraction patternsKnut Müller, •Marco Schowalter, Andreas Rosenauer, Jacob Jansen, John Titantah, and Dirk Lamoen
14:30 HL 33.2 Optical studies on surface passivation by both wet-chemical sulfur treatment and epitaxial core-shell growth of GaAs Nanowires — •Steffen Münch, Niklas Sköld, Stephan Reitzenstein, Johanna Trägardh, Alexander Gorbunov, Martin Kamp, Lars Samuelson, and Alfred Forchel
14:45 HL 33.3 Swift heavy ion irradiation for recovery from implantation defects of GaN — •Anne-Katrin Nix, Sven Müller, Carsten Ronning, Andrey Kamarou, Elke Wendler, Werner Wesch, Christina Trautmann, and Hans Hofsäss
15:00 HL 33.4 Effects of localized Boron states on the transport properties of n-BGaInAs — •Jörg Teubert, Peter J. Klar, Wolfram Heimbrodt, Andrew Lindsay, and Eoin P. O'Reilly
15:15 HL 33.5 Optical properties of InN layers grown by high pressure CVD — •Ronny Kirste, Mustafa Alevli, Markus R. Wagner, Christian Thomsen, Nikolaus Dietz, and Axel Hoffmann
  15:30 15 min. break
15:45 HL 33.6 Morphologische und strukturelle Untersuchungen an AlInN auf GaN/Si(111) — •Aniko Gadanecz, Jürgen Bläsing, Armin Dadgar, Christoph Hums, Thomas Hempel, Jürgen Christen und Alois Krost
16:00 HL 33.7 Eigenschaften des In-Defekt-Komplexes im III-V-Halbleiter AlN — •Bettina Steitz und Reiner Vianden
16:15 HL 33.8 Strain fields in the vicinity of nanoindentions on (100) surfaces of GaAs — •Christian Röder, Gert Irmer, Michael Schaper, Ralf Hammer, and Manfred Jurisch
16:30 HL 33.9 Nanofabrication of surface templates for low and high density quantum dots formation — •Tino Pfau, Aleksander Gushterov, and Johann Peter Reithmaier
16:45 HL 33.10 Enhancing nitrogen solubility in diluted nitrides by surface kinetics: An ab initio study — •Hazem Abu-Farsakh and Jörg Neugebauer
  17:00 15 min. break
17:15 HL 33.11 MOVPE Growth of Antimonides on InP Substrate — •Christian Grasse, Ralf Meyer, Gerhard Böhm, and Markus-Christian Amann
17:30 HL 33.12 Core levels, valence band structure and unoccupied states of clean InN surfaces — •Marcel Himmerlich, Anja Eisenhardt, Juergen A. Schaefer, and Stefan Krischok
17:45 HL 33.13 Increased binding energy of impurities near a semiconductor-vacuum interfaceA.P. Wijnheijmer, •J.K. Garleff, P.M. Koenraad, K. Teichmann, M. Wenderoth, S. Loth, and R.G. Ulbrich
18:00 HL 33.14 Manipulation of charge on a single donor atom by Scanning Tunneling Microscopy — •K. Teichmann, M. Wenderoth, S. Loth, R.G. Ulbrich, J.K. Garlef, A.P. Wijnheijmer, and P.M. Koenraad
18:15 HL 33.15 Selective etching of independent contacts in a double quantum-well structure: quantum-gate transistor — •Stefan Lang, Lukas Worschech, Monika Emmerling, Micha Strauß, Sven Höfling, and Alfred Forchel
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