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Berlin 2008 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 31: Poster II

HL 31.68: Poster

Tuesday, February 26, 2008, 16:30–19:00, Poster D

Development of Al-doped ZnO-nanocrystals for applications in advanced cell concepts of organic photovoltaics — •Daniel Rauh1, Volker Lorrmann1, Maria Hammer2, Andreas Sperlich2, Moritz Liedke1, Carsten Deibel2, Ingo Riedel1, and Vladimir Dyakonov1,21Bavarian Centre for Applied Energy Research (ZAE Bayern), Functional Materials for Energy Technology, Am Hubland, D-97074 Würzburg — 2Experimental Physics VI, Physical Institute, Julius-Maximilian University of Würzburg, Am Hubland, D-97074 Würzburg

We developed Al doped ZnO-nanocrystals (nc-ZnO:Al) via wet chemical synthesis. XRD-analysis, electron spin (ESR) and electron-nuclear spin double resonance (ENDOR) confirm that nc-ZnO:Al grows in Wurtzite structure and aluminium enters the crystal on site of the Zn-atom. ESR experiments on blends of P3HT and nc-ZnO:Al confirm light-induced charge separation with resonances assigned to polarons on P3HT and electrons in the nc-ZnO:Al domain. Photoinduced absorption spectroscopy was applied to rationalize infiltration of P3HT into porous nc-ZnO:Al matrix: Spectra of bilayer structures reveal coexistence of positive polarons and triplet excitons while strong polaron formation is accompanied with complete quenching of triplet excitons (TE) for infiltrated ZnO:Al-matrices. Polaron formation and quenching of TE is ascribed to the enlarged interface in the bulk heterojunction. ENDOR-measurements as well as photoluminescence studies on pure ZnO:Al confirm that sodium, incorporated during synthesis, result in deep-level acceptor states in the middle of the band gap.

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