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HL: Fachverband Halbleiterphysik
HL 36: Poster III
HL 36.44: Poster
Wednesday, February 27, 2008, 16:30–19:00, Poster D
Carbon doping of cubic GaN by CBr4 — •Elena Tschumak1, Hartwig Pöttgen1, Olga Kasdorf1, Jörg Schörmann1, Jürgen W. Gerlach2, Donat J. As1, and Klaus Lischka1 — 1Universität Paderborn, Department Physik, Warburger Strasse 100, 33095 Paderborn, Germany — 2Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstraße 15, 04318 Leipzig
Carbon-doped cubic GaN (c-GaN:C) films were grown by plasma-assisted molecular beam epitaxy using carbon tetrabromide (CBr4) as a carbon source. The growth was in situ moni-tored by reflection high-energy electron diffraction (RHEED). To detect the atomic carbon, the quadrupol mass spectrometer was used. Secondary ion mass spectroscopy (SIMS) was used to quantify the carbon incorporation behavior. The electrical properties of carbon doped c-GaN samples were studied by capacitance-voltage (CV) measurements and Hall-effect measurements between 10-400K. The optical properties of the epilayers were stud-ied by photoluminescence (PL) measurements at room temperature and at 4K.