Berlin 2008 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

MA: Fachverband Magnetismus

MA 10: Magnetic Materials

MA 10.10: Vortrag

Montag, 25. Februar 2008, 17:30–17:45, H 1028

High energy high resolution photoemission from Heusler compounds in half tunnelling-junctions. — •Andrei Gloskovskii¹, Benjamin Balke¹, Siham Ouardi¹, Gerhard H. Fecher¹, Claudia Felser¹, and Masafumi Yamamoto² — ¹Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg - University, 55099 Mainz — ²Graduate School of Informatic Science and Technology, Hokkaido University, Sapporo, Japan.

This work reports on high resolution photoelectron spectroscopy from the valence band of buried Co₂MnSi thin films excited by photons of about 5.9 keV energy. The measurements were performed on Co₂MnSi thin films covered by MgO(z)/AlO_x(1nm) with different thickness z from 2 nm to 20 nm of the MgO interlayer. The film structure corresponds to half a tunnelling magnetoresistive (TMR) junction. It is shown that the high energy spectra reveal the bulk electronic structure of the Heusler compound close to the Fermi energy even through the MgO layer. The high resolution measurements of the valence band close to the Fermi energy indicate a very large electron mean free path of the electrons through the MgO layer. The spectra of the buried thin films agree well with previous measurements from bulk samples.

The authors gratefully acknowledge financial support by the BMBF and DfG (Research Unit 559).