Berlin 2008 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
MA: Fachverband Magnetismus
MA 15: Magnetic Thin Films I
MA 15.3: Vortrag
Dienstag, 26. Februar 2008, 11:00–11:15, H 1012
Ab initio investigation of the interface structure in Fe3Si/GaAs multilayers — •Heike C. Herper and Peter Entel — Fachbereich Physik, Universität Duisburg-Essen, 47048 Duisburg
The combination of ferromagnetic materials with semiconductors is of
large interest in view of new microelectronic devices.
One important point regarding such devices is the interface between the
ferromagnet and the semiconductor which should be of good structural
quality and high spin-polarization. In this connection, the Fe3Si/GaAs system
is discussed as part of a semiconductor/ferromagnet hybrid structure.
Here, we investigate Fe3Si/GaAs multilayers grown in (001) and
(110) direction with respect to their electronic and magnetic properties
of the interface. In particular, the influence of the termination of the
semiconductor surface is studied.
The calculations are done within the
density functional theory employing the Vienna Ab-initio
Simulation Package (VASP) by using the Projector Augmented Wave (PAW)
method [1]. In order to investigate interdiffusion effects additional
calculations are performed by using the Korringa-Kohn-Rostoker (KKR) method
within the coherent potential approximation (CPA) [2].
[1] G. Kresse and J. Furthmüller, Phys. Rev. B 54, 11169 (1996)
[2] H. Akai, Code: Machikaneyama2002