Berlin 2008 – wissenschaftliches Programm

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MA: Fachverband Magnetismus

MA 18: Poster I : Bio Magn. (1-2); Mag.Imgaging (3-9); Magn. Semiconductors (10-16); Half Metals & Oxides (17-20); Coupl.Phenomena (21-27); Magn. Mat. (28-41); Micro & Nanostr. Magn. Materials (42-61); Micro Magn. (62-64); Surface Magnetism (65-70); Transport Phenomena (71-85)

MA 18.12: Poster

Dienstag, 26. Februar 2008, 15:15–18:30, Poster E

Influence of sputtering growth parameters on the conductivity of ion-implanted SnO₂:Co thin films — •Ali Awada¹, Dirk Menzel¹, Joachim Schoenes¹, Frank Ludwig², and Meinhard Schilling² — ¹Institut für Physik der Kondensierten Materie, TU Braunschweig — ²Institut für Elektrische Messtechnik und Grundlagen der Elektrotechnik, TU Braunschweig

Magnetic measurements of cobalt doped SnO₂ films show ferromagnetic ordering with Curie temperatures well above 300 K. The magnetic moment per Co ion varies between 0.1 µ_B and 1.5 µ_B [1,2]. Since the magnetic exchange is most likely mediated by free carriers, it is important to correlate the different magnetic moments with the free carrier concentrations. As the conductivity of the tin dioxide is presumably determined by a donor level originating from oxygen vacancies, it is anticipated that the stoichiometry of the sputtered SnO₂ plays a dominant role. In addition, increasing the cobalt concentration lowers the conductivity of the ion implanted SnO₂:Co, which can be interpreted as a charge carrier compensation effect [1]. Parameters like the sputtering power, oxygen partial pressure, total pressure or annealing temperatures have been varied to study the influences on the film growth and the results are correlated with the magnetism in doped SnO₂:Co.

[1] D. Menzel, A. Awada, J. Schoenes, F. Ludwig, M. Schilling, J. Appl. Phys. 52th MMM Conference Proceedings (2008)

[2] J. Schoenes, U. Pelzer, D. Menzel, K. Franke, F. Ludwig, and M. Schilling, Phys. Stat. Sol. C 3, 4115 (2006)