Berlin 2008 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 18: Poster I : Bio Magn. (1-2); Mag.Imgaging (3-9); Magn. Semiconductors (10-16); Half Metals & Oxides (17-20); Coupl.Phenomena (21-27); Magn. Mat. (28-41); Micro & Nanostr. Magn. Materials (42-61); Micro Magn. (62-64); Surface Magnetism (65-70); Transport Phenomena (71-85)
MA 18.24: Poster
Dienstag, 26. Februar 2008, 15:15–18:30, Poster E
Time dependent changes of the exchange bias field in MnIr/CoFe bilayers after ion bombardment with 10keV He ions — •Christoph Schmidt1, Tanja Weis1, Dieter Engel1, Volker Höink2, Günter Reiss2, and Arno Ehresmann2 — 1Department of Physics and Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, Heinrich-Plett-Str.40, D-34132 Kassel — 2University of Bielefeld, Department of Physics, Nano Device Group, P.O. Box 100131, D-33501 Bielefeld
The strength and direction of the unidirectional anisotropy of thin magnetic layer systems, showing the exchange bias effect, can be tailored by ion bombardment with e.g. He ions. Some of these systems show a drift of the exchange bias field after ion bombardment in an applied magnetic field with time to a finite value. Depending on the ion dose and the direction of the applied magnetic field relative to the direction of the unidirectional anisotropy before ion bombardment this drift could be to positive or negative exchange bias field values. We will present results demonstrating the time dependence of the exchange bias field for MnIr/CoFe bilayers for different ion doses and different CoFe layer thicknesses, as well as the dependence of the exchange bias field drift on the storing conditions between the magnetic characterization measurements.