Berlin 2008 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 32: Postersession II: Spinstruct./Phase Trans. (1-10); Spinelectronics (11-15); Thin Films (16 - 36); Particles/Clusters (37-45); Multiferroics (46-54); Spindynamics/Spin Torque (55 - 76); Post Deadlines (77-79)
MA 32.26: Poster
Freitag, 29. Februar 2008, 11:15–14:00, Poster E
Investigation of the magnetic phase transition in thin Fe50Pt50−xRhx films by neutron diffraction — •Jochen Fenske1, Dieter Lott1, Gary J. Mankey2, Wolfgang Schmidt3, Karin Schmalzl3, and Andreas Schreyer1 — 1GKSS Research Centre, Geesthacht — 2MINT Center, The University of Alabama, Tuscaloosa, AL, USA — 3JCNS, Jülich, Germany
In the last years perpendicular recording plays a major role in the development of novel magnetic data storage. Here, materials with high anisotropy are used which delivers good thermal stability. However in order to write the bits a high magnetic field is necessary. By the use of soft underlayers the write field can be significant reduced. Fe50Pt50−xRhx is a promising candidate for such an underlayer. Magnetization measurements of the bulk samples for x=10 refer to a antiferromagnetic (AF)/ferromagnetic (FM) phase transition at about 150K when heated. Additional magnetostriction measurements indicate that the phase transition could also be induced by applying a magnetic field [2]. The FM state lowers the high anisotropy and therefore the high write field. The AF state helps to stabilize the recording media via exchange interaction. For technical applications the use of thin films are essential to save space and costs for the next generation of magnetic storage devices. Here we present results on several thin Fe50Pt50−xRhx films with different concentration of Rh. The films were examined by polarized and unpolarized neutron diffraction in dependence of temperature and magnetic field. [2] P.A. Algarabel, et. al, J.Appl. Phys. 79 (8), 1996